Resonant thermal transport in semiconductor barrier structures

P. Hyldgaard

doi:10.1103/physrevb.69.193305

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arXiv · cond-mat/0401315

Resonant thermal transport in semiconductor barrier structures

P. Hyldgaard

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Abstract

I report that thermal single-barrier (TSB) and thermal double-barrier (TDB) structures (formed, for example, by inserting one or two regions of a few Ge monolayers in Si) provide both a suppression of the phonon transport as well as a resonant-thermal-transport effect. I show that high-frequency phonons can experience a traditional double-barrier resonant tunneling in the TDB structures while the formation of Fabry-Perot resonances (at lower frequencies) causes quantum oscillations in the temperature variation of both the TSB and TDB thermal conductances $σ_{\text{TSB}}$ and $σ_{\text{TDB}}$.

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P. Hyldgaard. 2004-01-18. Resonant thermal transport in semiconductor barrier structures. https://doi.org/10.1103/physrevb.69.193305

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