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Non-Gaussian Resistance Noise near Electrical Breakdown in Granular Materials

C. Pennetta·E. Alfinito·L. Reggiani·S. Ruffo
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Abstract

The distribution of resistance fluctuations of conducting thin films with granular structure near electrical breakdown is studied by numerical simulations. The film is modeled as a resistor network in a steady state determined by the competition between two biased processes, breaking and recovery. Systems of different sizes and with different levels of internal disorder are considered. Sharp deviations from a Gaussian distribution are found near breakdown and the effect increases with the degree of internal disorder. However, we show that in general this non-Gaussianity is related to the finite size of the system and vanishes in the large size limit. Nevertheless, near the critical point of the conductor-insulator transition, deviations from Gaussianity persist when the size is increased and the distribution of resistance fluctuations is well fitted by the universal Bramwell-Holdsworth-Pinton distribution.

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C. Pennetta, E. Alfinito, L. Reggiani, S. Ruffo. 2004-01-20. Non-Gaussian Resistance Noise near Electrical Breakdown in Granular Materials. https://doi.org/10.1016/j.physa.2004.04.030

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