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High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates

B. M. Kim·T. Brintlinger·E. Cobas·Haimei Zheng·M. S. Fuhrer·Z. Yu·R. Droopad·J. Ramdani·K. Eisenbeiser
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Abstract

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.

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B. M. Kim, T. Brintlinger, E. Cobas, Haimei Zheng, M. S. Fuhrer, Z. Yu, R. Droopad, J. Ramdani, K. Eisenbeiser. 2004-01-28. High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates. https://doi.org/10.1063/1.1682691

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