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Self-localization of holes in a lightly doped Mott insulator

Su-Peng Kou·Z. Y. Weng
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Abstract

We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T$_c$ cuprates. Disorder and impurities only play a minor and assistant role here.

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Su-Peng Kou, Z. Y. Weng. 2004-03-06. Self-localization of holes in a lightly doped Mott insulator. https://doi.org/10.1140/epjb%2Fe2005-00300-7

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