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A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

J. Bauer·D. Schuh·E. Uccelli·R. Schulz·A. Kress·F. Hofbauer·J. J. Finley·G. Abstreiter
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Abstract

We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.

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J. Bauer, D. Schuh, E. Uccelli, R. Schulz, A. Kress, F. Hofbauer, J. J. Finley, G. Abstreiter. 2004-03-12. A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs. https://arxiv.org/abs/cond-mat/0403328

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