arXiv · cond-mat/0403488
A unified treatment of current-induced instabilities on Si surfaces
Abstract
We introduce a simple two region model where the diffusion constant in a small region around each step on a vicinal surface can differ from that found on the terraces. Steady state results for this model provide a physically suggestive mapping onto kinetic coefficients in the conventional sharp-step model, with a negative coefficient arising from faster diffusion in the step region. A linear stability analysis of the resulting sharp-step model provides a unified and simple interpretation of many experimental results for current-induced step bunching and wandering instabilities on both Si(111) and Si(001) surfaces.
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Tong Zhao, John D. Weeks, Daniel Kandel. 2004-03-19. A unified treatment of current-induced instabilities on Si surfaces. https://doi.org/10.1103/physrevb.70.161303
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