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Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well

Yu. G. Arapov·V. N. Neverov·G. I. Harus·N. G. Shelushinina·M. V. Yakunin·O. A. Kuznetsov·A. de Visser·L. Ponomarenko
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Abstract

For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) behavior of resistivity R(T) induced by a perpendicular magnetic field B. The revealed positive magnetoresistance scales as a function of B/T. We attribute this finding to a suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum.

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Yu. G. Arapov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin, O. A. Kuznetsov, A. de Visser, L. Ponomarenko. 2004-04-15. Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well. https://arxiv.org/abs/cond-mat/0404355

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