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Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction

R. Moriya·K. Hamaya·A. Oiwa·H. Munekata
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Abstract

We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 10^5 A/cm^2.

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R. Moriya, K. Hamaya, A. Oiwa, H. Munekata. 2004-04-28. Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction. https://doi.org/10.1143/jjap.43.l825

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