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Negative Magnetoresistance in (In,Mn)As

S. J. May·A. J. Blattner·B. W. Wessels
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Abstract

The magnetotransport properties of an In0.95Mn0.05As thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to 300 K. The resistivity decreased with increasing temperature from 90 ohm-cm to 0.05 ohm-cm. The field dependence of the low temperature magnetoresistance was measured. A negative magnetoresistance was observed below 17 K with a hysteresis in the magnetoresistance observed at 5 K. The magnetoresistance as a function of applied field was described by the Khosla-Fischer model for spin scattering of carriers in an impurity band.

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S. J. May, A. J. Blattner, B. W. Wessels. 2004-06-09. Negative Magnetoresistance in (In,Mn)As. https://doi.org/10.1103/physrevb.70.073303

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