Spin characterization and control over the regime of radiation-induced zero-resistance states

R. G. Mani

doi:10.1109/tnano.2004.840147

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Spin characterization and control over the regime of radiation-induced zero-resistance states

R. G. Mani

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Abstract

Over the regime of the radiation-induced zero-resistance states and associated oscillatory magnetoresistance, we propose a low magnetic field analog of quantum-Hall-limit techniques for the electrical detection of electron spin- and nuclear magnetic- resonance, dynamical nuclear polarization via electron spin resonance, and electrical characterization of the nuclear spin polarization via the Overhauser shift. In addition, beats observed in the radiation-induced oscillatory-magnetoresistance are developed into a method to measure and control the zero-field spin splitting due to the Bychkov-Rashba and bulk inversion asymmetry terms in the high mobility GaAs/AlGaAs system.

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R. G. Mani. 2004-07-06. Spin characterization and control over the regime of radiation-induced zero-resistance states. https://doi.org/10.1109/tnano.2004.840147

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