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A spin field effect transistor for low leakage current

S. Bandyopadhyay·M. Cahay
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Abstract

In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the ``off''-state, resulting in significant standby power dissipation. We can counter this effect of the magnetic field by engineering the Dresselhaus spin-orbit interaction in the channel with a backgate. For realistic device parameters, a nearly perfect cancellation is possible, which should result in a low leakage current.

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S. Bandyopadhyay, M. Cahay. 2004-09-09. A spin field effect transistor for low leakage current. https://doi.org/10.1016/j.physe.2004.07.009

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