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Motion of Contact Line of a Crystal Over the Edge of Solid Mask in Epitaxial Lateral Overgrowth

M. Khenner
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Abstract

Mathematical model that allows for direct tracking of the homoepitaxial crystal growth out of the window etched in the solid, pre-deposited layer on the substrate is described. The growth is governed by the normal (to the crystal-vapor interface) flux from the vapor phase and by the interface diffusion. The model accounts for possibly inhomogeneous energy of the mask surface and for strong anisotropies of crystal-vapor interfacial energy and kinetic mobility. Results demonstrate that the motion of the crystal-mask contact line slows down abruptly as radius of curvature of the mask edge approaches zero. Numerical procedure is suggested to overcome difficulties associated with ill-posedness of the evolution problem for the interface with strong energy anisotropy. Keywords: Thin films, epitaxy, MOCVD, surface diffusion, interface dynamics, contact lines, rough surfaces, wetting, regularization of ill-posed evolution problems.

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BibTeXRIS

M. Khenner. 2004-07-14. Motion of Contact Line of a Crystal Over the Edge of Solid Mask in Epitaxial Lateral Overgrowth. https://doi.org/10.1016/j.commatsci.2004.07.006

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