Thin-Film Aluminum Microstructure as a Hot-Electron Microwave Radiation Detector

I. Yu. Borisenko; V. I. Kuznetsov; V. A. Tulin; D. Esteve

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Thin-Film Aluminum Microstructure as a Hot-Electron Microwave Radiation Detector

I. Yu. Borisenko·V. I. Kuznetsov·V. A. Tulin·D. Esteve

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Abstract

We have found that the thin film aluminum structures shaped into a chain of micron sized islands connected by narrow isthmuses, can modify their electrical and structural properties under microwave radiation. As a result, at the temperature of 4.2 K the film structures turn into a kind of lateral periodic structure N-S-N, where N is for normal islands, S is for superconducting isthmuses. Current-voltage characteristics of the samples, as well as changes of these characteristics under low power radiation, have been studied over the temperature range from 1.3 to 10 K. The sensitivity of a structure as a microwave detector runs 10^{5} V/W.

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I. Yu. Borisenko, V. I. Kuznetsov, V. A. Tulin, D. Esteve. 2004-07-23. Thin-Film Aluminum Microstructure as a Hot-Electron Microwave Radiation Detector. https://arxiv.org/abs/cond-mat/0407636

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