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Two Aspects of the Mott-Hubbard Transition in Cr-doped V_2O_3

K. Held·J. W. Allen·V. I. Anisimov·V. Eyert·G. Keller·H. -D. Kim·S. -K. Mo·D. Vollhardt
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Abstract

The combination of bandstructure theory in the local density approximation with dynamical mean field theory was recently successfully applied to V$_2$O$_3$ -- a material which undergoes the f amous Mott-Hubbard metal-insulator transition upon Cr doping. The aim of this sh ort paper is to emphasize two aspects of our recent results: (i) the filling of the Mott-Hubbard gap with increasing temperature, and (ii) the peculiarities of the Mott-Hubbard transition in this system which is not characterized by a diver gence of the effective mass for the $a_{1g}$-orbital.

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K. Held, J. W. Allen, V. I. Anisimov, V. Eyert, G. Keller, H. -D. Kim, S. -K. Mo, D. Vollhardt. 2004-07-30. Two Aspects of the Mott-Hubbard Transition in Cr-doped V_2O_3. https://doi.org/10.1016/j.physb.2005.01.181

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