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Magnetoresistance of a semiconducting magnetic wire with domain wall

V. K. Dugaev·J. Barnas·J. Berakdar·V. I. Ivanov·W. Dobrowolski·V. F. Mitin
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Abstract

We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wave length of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed.

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V. K. Dugaev, J. Barnas, J. Berakdar, V. I. Ivanov, W. Dobrowolski, V. F. Mitin. 2004-08-20. Magnetoresistance of a semiconducting magnetic wire with domain wall. https://doi.org/10.1103/physrevb.71.024430

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