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Observing the spin-Coulomb drag in spin-valve devices

G. Vignale
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Abstract

The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix -- the so-called "spin-drag resistivity". It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomplish this separation in a spin-valve device.

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G. Vignale. 2004-08-24. Observing the spin-Coulomb drag in spin-valve devices. https://doi.org/10.1103/physrevb.71.125103

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