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Modelling of Statistical Low-Frequency Noise of Deep-Submicron MOSFETs

Gilson I Wirth·Jeongwook Koh·Roberto da Silva·Roland Thewes·Ralf Brederlow
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Abstract

The low-frequency noise (LF-noise) of deep submicron MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics-based parameters which cause statistical fluctuations in LF-noise behavior of individual devices. It can easily be implemented in a compact model for use in circuit simulation tools.

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Gilson I Wirth, Jeongwook Koh, Roberto da Silva, Roland Thewes, Ralf Brederlow. 2004-09-01. Modelling of Statistical Low-Frequency Noise of Deep-Submicron MOSFETs. https://doi.org/10.1109/ted.2005.850955

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