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Coupling of spontaneous emission from GaN/AlN quantum dots into silver surface plasmons

Arup Neogi·Hadis Morkoc·Takamasa Kuroda·Atsushi Tackeuchi
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Abstract

We have demonstrated surface-plasmon induced change in spontaneous emission rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots (QD). Using time-resolved and continuous-wave photoluminescence measurements, the recombination rate in AlN/GaN QD is shown to be enhanced when spontaneous emission is resonantly coupled to a metal-surface plasmon mode. The exciton recombination process via Ag-surface plasmon modes is observed to be as much as 3-7 times faster than in normal QD spontaneous emission and depends strongly on the emission wavelength and silver thickness.

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Arup Neogi, Hadis Morkoc, Takamasa Kuroda, Atsushi Tackeuchi. 2004-09-03. Coupling of spontaneous emission from GaN/AlN quantum dots into silver surface plasmons. https://doi.org/10.1364/ol.30.000093

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