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Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes

Swaroop Ganguly·L. F. Register·S. Banerjee·A. H. MacDonald
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Abstract

We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property follows from elementary quantum transport theory notions combined with a mean field description of diluted magnetic semiconductor ferromagnetism. We illustrate this effect by solving coupled non-equilibrium Green's function, magnetic mean-field, and electrostatic Poisson equations self-consistently to predict the bias voltage and temperature dependence of the magnetization of a model system.

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Swaroop Ganguly, L. F. Register, S. Banerjee, A. H. MacDonald. 2004-10-25. Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes. https://doi.org/10.1103/physrevb.71.245306

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