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Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures

G. M. Minkov·A. A. Sherstobitov·A. V. Germanenko·O. E. Rut·V. A. Larionova·B. N. Zvonkov
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Abstract

Low-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of low-field magnetoresistance is well described by the Hikami-Larkin-Nagaoka expression.

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G. M. Minkov, A. A. Sherstobitov, A. V. Germanenko, O. E. Rut, V. A. Larionova, B. N. Zvonkov. 2004-09-14. Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures. https://doi.org/10.1103/physrevb.71.165312

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