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Effect of in-plane magnetic field on the photoluminescence spectrum of modulation-doped quantum wells and heterojunctions

B. M. Ashkinadze·E. Linder·E. Cohen·L. N. Pfeiffer
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Abstract

The photoluminescence (PL) spectrum of modulation-doped GaAs/AlGaAs quantum wells (MDQW) and heterojunctions (HJ) is studied under a magnetic field ($B_{\|}$) applied parallel to the two-dimensional electron gas (2DEG) layer. The effect of $B_{\|}$ strongly depends on the electron-hole separation ($d_{eh}$), and we revealed remarkable $B_{\|}$-induced modifications of the PL spectra in both types of heterostructures. A model considering the direct optical transitions between the conduction and valence subband that are shifted in k-space under $B_{\|}$, accounts qualitatively for the observed spectral modifications. In the HJs, the PL intensity of the bulk excitons is strongly reduced relatively to that of the 2DEG with increasing $B_{\|}$. This means that the distance between the photoholes and the 2DEG decreases with increased $B_{\|}$, and that free holes are responsible for the hole-2DEG PL.

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B. M. Ashkinadze, E. Linder, E. Cohen, L. N. Pfeiffer. 2004-10-05. Effect of in-plane magnetic field on the photoluminescence spectrum of modulation-doped quantum wells and heterojunctions. https://doi.org/10.1103/physrevb.71.045303

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