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Spin dependent transport in ferromagnetic/superconductor/ferromagnetic single electron transistor

Dawei Wang·Jia G. Lu
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Abstract

Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron tunneling effects. Transport measurements performed in external magnetic field show that, when the two ferromagnetic leads are in antiparallel configuration, spin imbalance leads to a suppression of superconductivity.

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Dawei Wang, Jia G. Lu. 2004-10-14. Spin dependent transport in ferromagnetic/superconductor/ferromagnetic single electron transistor. https://doi.org/10.1063/1.1850331

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