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Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

T. Slobodskyy·C. Rüster·R. Fiederling·D. Keller·C. Gould·W. Ossau·G. Schmidt·L. W. Molenkamp
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Abstract

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

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T. Slobodskyy, C. Rüster, R. Fiederling, D. Keller, C. Gould, W. Ossau, G. Schmidt, L. W. Molenkamp. 2004-10-21. Molecular-beam epitaxy of (Zn,Mn)Se on Si(100). https://doi.org/10.1063/1.1841456

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