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Electric field induced charge noise in doped silicon: ionization of phosphorus donors

A. J. Ferguson·V. C. Chan·A. R. Hamilton·R. G. Clark
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Abstract

We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the substrates are in the insulating regime. By measuring the SET Coulomb oscillations, we find a gate voltage dependent charge noise on the more heavily doped substrate. This charge noise, which is seen to have a 1/f spectrum, is attributed to the electric field induced tunneling of electrons from their phosphorus donor potentials.

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A. J. Ferguson, V. C. Chan, A. R. Hamilton, R. G. Clark. 2005-11-10. Electric field induced charge noise in doped silicon: ionization of phosphorus donors. https://doi.org/10.1063/1.1994660

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