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Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems

B. Kaestner·D. G. Hasko·D. A. Williams
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Abstract

A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems.

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B. Kaestner, D. G. Hasko, D. A. Williams. 2004-11-05. Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems. https://arxiv.org/abs/cond-mat/0411130

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