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Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields

S. A. Crooker·D. L. Smith
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Abstract

Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent drift and/or diffusion is controlled with electric, magnetic, and - in particular - strain fields. Spin precession induced by controlled uniaxial stress along the <110> axes demonstrates the direct k-linear spin-orbit coupling of electron spin to the shear (off-diagonal) components of the strain tensor.

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BibTeXRIS

S. A. Crooker, D. L. Smith. 2004-11-18. Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields. https://doi.org/10.1103/physrevlett.94.236601

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