Negative Quantum Capacitance of Carbon Nanotube Field-Effect Transistors

L. Latessa; A. Pecchia; A. Di Carlo; P. Lugli

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Negative Quantum Capacitance of Carbon Nanotube Field-Effect Transistors

L. Latessa·A. Pecchia·A. Di Carlo·P. Lugli

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Abstract

Atomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. Results stressing the predominant effect of quantum capacitance in limiting or even enhancing screening properties of the CNT are shown. Other contributions to the quantum capacitance beyond the electronic density of state (DOS) are pointed out. Negative values of the quantum capacitance are obtained for low-density systems, which correspondingly over-screen the gate field. This unconventional behavior of the quantum capacitance is related to the predominance of the exchange contribution in the total electronic energy of the CNT.

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L. Latessa, A. Pecchia, A. Di Carlo, P. Lugli. 2004-12-20. Negative Quantum Capacitance of Carbon Nanotube Field-Effect Transistors. https://arxiv.org/abs/cond-mat/0412540

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