Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers

T. Hörmann; G. Brunthaler

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Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers

T. Hörmann·G. Brunthaler

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Abstract

The dipole trap model is able to explain the main properties of the apparent metal-to-insulator transition in gated high mobility Si-inversion layers. Our numerical calculations are compared with previous analytical ones and the assumptions of the model are discussed carefully. In general we find a similar behavior but include further details in the calculation. The calculated strong density dependence of the resistivity is not yet in full agreement with the experiment.

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T. Hörmann, G. Brunthaler. 2004-12-31. Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers. https://arxiv.org/abs/cond-mat/0412762

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