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Radiation-induced zero-resistance states with resolved Landau levels

R. G. Mani
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Abstract

The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electron system exhibits an oscillatory-magnetoresistance with vanishing resistance in the vicinity of magnetic fields $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2π\textit{f}m^{*}/e$, m$^{*}$ is an the effective mass, e is the charge, \textit{f} is the microwave frequency, and $j$ =1,2,3... Here, we report transport with well-resolved Landau levels, and some transmission characteristics.

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R. G. Mani. 2005-01-05. Radiation-induced zero-resistance states with resolved Landau levels. https://doi.org/10.1063/1.1825066

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