Electron spin interferometry using a semiconductor ring structure

Y. K. Kato; R. C. Myers; A. C. Gossard; D. D. Awschalom

doi:10.1063/1.1906301

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arXiv · cond-mat/0501306

Electron spin interferometry using a semiconductor ring structure

Y. K. Kato·R. C. Myers·A. C. Gossard·D. D. Awschalom

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Abstract

A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive transport regime. Optical pumping with circularly polarized light on one arm establishes dynamic nuclear polarization which acts as a local effective magnetic field on electron spins due to the hyperfine interaction. This local field causes one spin packet to precess faster than the other, thereby controlling the spin interference when the two packets are combined.

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Y. K. Kato, R. C. Myers, A. C. Gossard, D. D. Awschalom. 2005-01-13. Electron spin interferometry using a semiconductor ring structure. https://doi.org/10.1063/1.1906301

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