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Spin accumulation and decay in magnetic Schottky barriers

Gerrit E. W. Bauer·Yaroslav Tserkovnyak·Arne Brataas·Jun Ren·Ke Xia·Maciej Zwierzycki·Paul J. Kelly
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Abstract

The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor. The GaAs|MnAs interface resistance is obtained from an analysis of the magnetic field dependent Kerr rotation experiments by Stephens et al. and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows towards the theoretical values, reflecting increasingly efficient Schottky barrier screening.

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Gerrit E. W. Bauer, Yaroslav Tserkovnyak, Arne Brataas, Jun Ren, Ke Xia, Maciej Zwierzycki, Paul J. Kelly. 2005-01-29. Spin accumulation and decay in magnetic Schottky barriers. https://doi.org/10.1103/physrevb.72.155304

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