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Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

A. Salleo·F. Endicott·R. A. Street
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Abstract

We measured the bias stress characteristics of poly(thiophene) semi-crystalline thin-film transistors (TFTs) as a function stress times, gate voltages and duty-cycles. At room temperature, the bias stress has two components: a fast reversible component and a slow irreversible component. We hypothesize that the irreversible component is due to charge trapping in the disordered areas of the semiconductor film. At low duty-cycle (<2%), the fast bias stress component is reversed during the off-part of the cycle therefore the observed VT shift in only caused by irreversible trapping. Irreversible trapping follows power-law kinetics with a time exponent approximately equal to 0.37. We use these findings to estimate the lifetime of TFTs used as switches in display backplanes.

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A. Salleo, F. Endicott, R. A. Street. 2005-02-28. Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors. https://doi.org/10.1063/1.1968437

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