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Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells

Wayne H. Lau·Michael E. Flatté
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Abstract

Conduction electron spin lifetimes ($T_1$) and spin coherence times ($T_2$) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a factor of four enhancement in the spin lifetimes at optimal values of the electric fields. The much smaller enhancement compared to previous calculations is due to overestimates of the zero-field spin lifetime and the importance of nonlinear effects.

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Wayne H. Lau, Michael E. Flatté. 2005-03-02. Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells. https://doi.org/10.1103/physrevb.72.161311

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