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Simulation of quantum dead-layers in ferroelectric tunnel junctions

K. M. Indlekofer·H. Kohlstedt
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Abstract

In this letter, we simulate electronic transport through a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We show that quantum effects such as Friedel oscillations lead to deviations from the Thomas-Fermi screening model. As a consequence, we predict a bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.

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K. M. Indlekofer, H. Kohlstedt. 2005-03-03. Simulation of quantum dead-layers in ferroelectric tunnel junctions. https://doi.org/10.1209/epl%2Fi2005-10219-7

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