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On the low-field insulator-quantum Hall conductor transitions

Tsai-Yu Huang·J. R. Juang·C. F. Huang·Gil-Ho Kim·Chao-Ping Huang·C. -T. Liang·Y. H. Chang·Y. F. Chen·Y. Lee·D. A. Ritchie
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Abstract

We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ν=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ν=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.

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Tsai-Yu Huang, J. R. Juang, C. F. Huang, Gil-Ho Kim, Chao-Ping Huang, C. -T. Liang, Y. H. Chang, Y. F. Chen, Y. Lee, D. A. Ritchie. 2005-03-12. On the low-field insulator-quantum Hall conductor transitions. https://doi.org/10.1016/j.physe.2003.11.258

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