Full counting-statistics in a single-electron transistor in the presence of nonequilibrium quantum fluctuations of charge

Yasuhiro Utsumi

doi:10.1142/9789812773210_0027

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Full counting-statistics in a single-electron transistor in the presence of nonequilibrium quantum fluctuations of charge

Yasuhiro Utsumi

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Abstract

Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we evaluate current distribution in a single-electron transistor in a regime where a total tunnel resistance is small. Nonequilibrium quantum fluctuations of charge induce a lifetime broadening of charge-state level, as well as renormalization of system parameters. We find that the lifetime broadening effect may suppress the probability of relatively large current.

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Yasuhiro Utsumi. 2005-03-29. Full counting-statistics in a single-electron transistor in the presence of nonequilibrium quantum fluctuations of charge. https://doi.org/10.1142/9789812773210_0027

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