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Photo-excited zero-resistance states in the GaAs/AlGaAs system

R. G. Mani
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Abstract

The microwave-excited high mobility two-dimensional electron system exhibits, at liquid helium temperatures, vanishing resistance in the vicinity of $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2π\textit{f}m^{*}/e$, m$^{*}$ is an effective mass, e is the charge, and \textit{f} is the microwave frequency. Here, we summarize some experimental results.

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R. G. Mani. 2005-04-08. Photo-excited zero-resistance states in the GaAs/AlGaAs system. https://doi.org/10.1142/s0217979204026858

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