Correlated band structure of electron-doped cuprate materials

C. Dahnken; M. Potthoff; E. Arrigoni; W. Hanke

doi:10.1063/1.2199448

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Correlated band structure of electron-doped cuprate materials

C. Dahnken·M. Potthoff·E. Arrigoni·W. Hanke

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Abstract

We present a numerical study of the doping dependence of the spectral function of the n-type cuprates. Using a variational cluster-perturbation theory approach based upon the self-energy-functional theory, the spectral function of the electron-doped two-dimensional Hubbard model is calculated. The model includes the next-nearest neighbor electronic hopping amplitude $t'$ and a fixed on-site interaction $U=8t$ at half filling and doping levels ranging from $x=0.077$ to $x=0.20$. Our results support the fact that a comprehensive description of the single-particle spectrum of electron-doped cuprates requires a proper treatment of strong electronic correlations. In contrast to previous weak-coupling approaches, we obtain a consistent description of the ARPES experiments without the need to introduce a doping-dependent on-site interaction $U$.

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C. Dahnken, M. Potthoff, E. Arrigoni, W. Hanke. 2005-04-25. Correlated band structure of electron-doped cuprate materials. https://doi.org/10.1063/1.2199448

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