arXiv · cond-mat/0504664
de Haas-van Alphen effect investigation of the electronic structure of Al substituted MgB_2
Abstract
We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al doped crystals of MgB$_2$. We have measured crystals with $\sim 7.5$% Al which have a $T_c$ of 33.6 K, ($\sim 14$% lower than pure MgB$_2$). dHvA frequencies for the $σ$ tube orbits in the doped samples are lower than in pure MgB$_2$, implying a $16\pm2%$ reduction in the number of holes in this sheet of Fermi surface. The mass of the quasiparticles on the larger $σ$ orbit is lighter than the pure case indicating a reduction in electron-phonon coupling constant $λ$. These observations are compared with band structure calculations, and found to be in excellent agreement.
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A. Carrington, J. D. Fletcher, J. R. Cooper, O. J. Taylor, L. Balicas, N. D. Zhigadlo, S. M. Kazakov, J. Karpinski, J. P. H. Charmant, J. Kortus. 2005-07-14. de Haas-van Alphen effect investigation of the electronic structure of Al substituted MgB_2. https://doi.org/10.1103/physrevb.72.060507
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