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Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO

K. F. Eid·M. B. Stone·O. Maksimov·T. C. Shih·K. C. Ku·W. Fadgen·C. J. Palmstrom·P. Schiffer·N. Samarth
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Abstract

We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.

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K. F. Eid, M. B. Stone, O. Maksimov, T. C. Shih, K. C. Ku, W. Fadgen, C. J. Palmstrom, P. Schiffer, N. Samarth. 2005-05-01. Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO. https://doi.org/10.1063/1.1846033

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