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Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes

Swaroop Ganguly·A. H. MacDonald·L. F. Register·S. Banerjee
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Abstract

We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.

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Swaroop Ganguly, A. H. MacDonald, L. F. Register, S. Banerjee. 2005-05-05. Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes. https://doi.org/10.1103/physrevb.73.033310

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