Variable resistance at the boundary between semimetal and excitonic insulator

Massimo Rontani; L. J. Sham

doi:10.1016/j.ssc.2004.07.076

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Variable resistance at the boundary between semimetal and excitonic insulator

Massimo Rontani·L. J. Sham

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Abstract

We solve the two-band model for the transport across a junction between a semimetal and an excitonic insulator. We analyze the current in terms of two competing terms associated with neutral excitons and charged carriers, respectively. We find a high value for the interface resistance, extremely sensitive to the junction transparency. We explore favorable systems for experimental confirmation.

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Massimo Rontani, L. J. Sham. 2005-05-10. Variable resistance at the boundary between semimetal and excitonic insulator. https://doi.org/10.1016/j.ssc.2004.07.076

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