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Inverse Tunneling Magnetoresistance in nanoscale Magnetic Tunnel Junctions

Tae-Suk Kim
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Abstract

We report on our theoretical study of the inverse TMR effect in the spin polarized transport through a narrow channel. In the weak tunneling limit, we find the ordinary positive TMR. The TMR changes its sign as the transmission probability becomes large close to a unity. Our results might be relevant to the magnetic tunnel junction with a pinhole or a quantum point contact.

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Tae-Suk Kim. 2005-05-16. Inverse Tunneling Magnetoresistance in nanoscale Magnetic Tunnel Junctions. https://doi.org/10.1103/physrevb.72.024401

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