Characterization of E'delta and triplet point defects in oxygen deficient amorphous silicon dioxide

Abstract

We report an experimental study by electron paramagnetic resonance (EPR) of gamma ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (E'gamma, E'delta and triplet) and one extrinsic ([AlO4]0) paramagnetic centers are induced. All the paramagnetic defects but E'gamma center are found to reach a concentration limit value for doses above 10^3 kGy, suggesting a generation process from precursors. Isochronal thermal treatments of a sample irradiated at 10^3 kGy have shown that for T>500 K the concentrations of E'gamma and E'delta centers increase concomitantly to the decrease of [AlO4]0. This occurrence speaks for an hole transfer process from [AlO4]0 centers to diamagnetic precursors of E' centers proving the positive charge state of the thermally induced E'gamma and E'delta centers and giving insight on the origin of E'gamma from an oxygen vacancy. A comparative study of the E'delta center and of the 10 mT doublet EPR signals on three distinct materials subjected to isochronal and isothermal treatments, has shown a quite general linear correlation between these two EPR signals. This result confirms the attribution of the 10 mT doublet to the hyperfine structure of the E'delta center, originating from the interaction of the unpaired electron with a nucleus of 29Si (I=1/2). Analogies between the microwave saturation properties of E'gamma and E'delta centers and between those of their hyperfine structures are found and suggest that the unpaired electron wave function involves similar Si sp3 hybrid orbitals; specifically, for the E'delta the unpaired electron is supposed to be delocalized over four such orbitals of four equivalent Si atoms.