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Theory of Spin Hall conductivity in n-doped GaAs

Hans-Andreas Engel·Bertrand I. Halperin·Emmanuel I. Rashba
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Abstract

We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew scattering and side jump contributions to the spin Hall conductance. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with recent experiments by Kato et al. [Science 306, 1910 (2004)].

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Hans-Andreas Engel, Bertrand I. Halperin, Emmanuel I. Rashba. 2005-05-21. Theory of Spin Hall conductivity in n-doped GaAs. https://doi.org/10.1103/physrevlett.95.166605

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