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Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

N. I. Cade·H. Gotoh·H. Kamada·T. Tawara·T. Sogawa·H. Okamoto·H. Nakano
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Abstract

We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.

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N. I. Cade, H. Gotoh, H. Kamada, T. Tawara, T. Sogawa, H. Okamoto, H. Nakano. 2005-05-30. Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition. https://doi.org/10.1063/1.2093927

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