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Energetic disorder at the metal/organic semiconductor interface

S. V. Novikov·G. G. Malliaras
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Abstract

The physics of organic semiconductors is dominated by the effects of energetic disorder. We show that image forces reduce the electrostatic component of the total energetic disorder near an interface with a metal electrode. Typically, the variance of energetic disorder is dramatically reduced at the first few layers of organic semiconductor molecules adjacent to the metal electrode. Implications for charge injection into organic semiconductors are discussed.

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S. V. Novikov, G. G. Malliaras. 2005-06-29. Energetic disorder at the metal/organic semiconductor interface. https://doi.org/10.1103/physrevb.73.033308

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