Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect

Yukihide Tsuji; Toshimitsu Mochizuki; Tohru Okamoto

doi:10.1063/1.2009811

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Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect

Yukihide Tsuji·Toshimitsu Mochizuki·Tohru Okamoto

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Abstract

Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports a simple model based on a surface donor level lying above the conduction band minimum. The observations of the quantized Hall resistance and zero longitudinal resistivity demonstrate the perfect two-dimensionality of the surface electron system. We also observed the Rashba effect due to the strong asymmetry of the confining potential well.

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Yukihide Tsuji, Toshimitsu Mochizuki, Tohru Okamoto. 2005-07-07. Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect. https://doi.org/10.1063/1.2009811

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