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Reorientation Transition in Single-Domain (Ga,Mn)As

K-Y. Wang·M. Sawicki·K. W. Edmonds·R. P. Campion·S. Maat·C. T. Foxon·B. L. Gallagher·T. Dietl
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Abstract

We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain model. The uniaxial and biaxial anisotropy constants vary respectively as the square and fourth power of the spontaneous magnetization across the whole temperature range up to T_C. The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally-assisted magnetization switching.

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K-Y. Wang, M. Sawicki, K. W. Edmonds, R. P. Campion, S. Maat, C. T. Foxon, B. L. Gallagher, T. Dietl. 2005-07-07. Reorientation Transition in Single-Domain (Ga,Mn)As. https://doi.org/10.1103/physrevlett.95.217204

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