Spin transference and magnetoresistance amplification in a transistor

Hanan Dery; Lukasz Cywinski; Lu J. Sham

doi:10.1103/physrevb.73.161307

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Spin transference and magnetoresistance amplification in a transistor

Hanan Dery·Lukasz Cywinski·Lu J. Sham

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Abstract

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room temperature amplification of the magneto-resistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.

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Hanan Dery, Lukasz Cywinski, Lu J. Sham. 2005-09-21. Spin transference and magnetoresistance amplification in a transistor. https://doi.org/10.1103/physrevb.73.161307

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